MBR10150CT thru 10200ct features metal of silicon rectifier,majority carrier conduct on guard ring for transient protection low power loss, high efficiency high current capability, low vf high surge capacity plastic package has ul flammability classification 94v-0 mechanical data case : to-220ab molded plastic polarity : as marked on the body weight : 0.08 ounces, 2.24 grams mounting position : any max. mounting torque = 0.5 n.m (5.1 kgf.cm) to-220ab all dimensions in millimeter to-220ab dim. min. max. ac d e f g h b 14.22 15.88 10.67 9.65 2.54 3.43 6.86 5.84 8.26 9.28 - 6.35 12.70 14.73 0.51 2.79 n m l k j i 1.14 2.29 0.64 0.30 3.53 4.09 3.56 4.83 1.14 1.40 2.92 2.03 pin 1 pin 3 pin 2 case a b c k j i h g f e d n m l h pin 1 3 2 schottky barrier rectifiers reverse voltage - 150 to 200 volts forward current - 10 amperes semiconductor lite-on maximum ratings and electrical characteristics ratings at 25 ambient temperature unless otherwise specified. v rms v dc v rrm i (av) i fsm maximum average forward rectified current (see fig.1) peak forward surge current 8.3ms single half sine-wave superimposed on rated load maximum recurrent peak reverse voltage maximum rms voltage maximum dc blocking voltage 10 120 t j operating temperature range -65 to +175 t stg storage temperature range -65 to +175 typical thermal resistance (note 2) r 0jc 3.0 c/w a a v unit v v characteristics symbol v f v i r maximum dc reverse current at rated dc blocking voltage @t j =125 c @t j =25 c 82 ua ma t c =105 c maximum forward voltage (note 1) i f =5a @ i f =5a @ i f =10a @ i f =10a @ t j =125 c t j =25 c t j =125 c t j =25 c MBR10150CT 150 105 150 voltage rate of change (rated vr) dv/dt 10000 v/us 0.92 0.75 1.00 0.85 typical junction capacitance per element (note 3) c j 300 notes : 1. 300us pulse width, 2% duty cycle. 2. thermal resistance junction to ca se. 3. measured at 1.0mhz and applied re verse voltage of 4.0v dc. pf rev. 4, oct-2010, kthc21 mbr10200ct 200 140 200
rating and characteristic curves MBR10150CT thru 10200ct 100 150 200 250 50 0.01 0.1 1 10 fig.3 - typical reverse characteristics reverse voltage , volts instantaneous reverse current , (ma) 0.001 100 0 t j =125 t j =25 capacitance , (pf) reverse voltage , volts fig.5 - typical junction capacitance 10 4 0.1 1 100 10 20 50 100 200 500 f=1mhz t j =25 800 fig.4 - typical forward characteristics instantaneous forward current , amperes instantaneous forward voltage , volts 0.1 1.0 10 100 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 t j =25 pule width 300us 2% duty cycle number of cycles at 60hz peak forward surge current , amperes 1 5 10 50 100 2 20 0 50 100 150 200 250 300 fig.2 - maximum nonrepetitive surge current 8.3 ms single half-sine-wave temperature , fig.1 - forward current derating curve average forward current , amperes 25 75 100 125 150 50 175 single phase half wave 60hz resistive or inductive load 10.0 0 5.0
legal disclaimer notice MBR10150CT thru 10200ct lsc reserves the right to make changes to this docu ment and its products and specifications at any time without notice. custome rs should obtain and confirm the latest product information and specifications b efore final design, purchase or use. lsc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does l sc assume any liability for application assistance or customer product design. lsc does not warrant or accept any liability with products which are purcha sed or used for any unintended or unauthorized application. no license is granted by implication or otherwise u nder any intellectual property rights of lsc. lsc products are not authorized for use as critical components in life support devices or systems without express written approval of lsc. important notice and disclaimer
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